tsmf3710 document number 81088 rev. 1.2, 08-mar-05 vishay semiconductors www.vishay.com 1 94 8553 high speed infrared emitting diode, 870 nm, gaalas double hetero description tsmf3710 is a high speed infrared emitting diode in gaalas double hetero (dh) technology in a miniature plcc-2 smd package. dh technology combines high speed with high radiant power at wavelength of 870 nm. features ? high radiant power high speed t r = 30 ns high modulation band width f c = 12 mhz peak wavelength p = 870 nm high reliability low forward voltage suitable for high pulse current application wide angle of half intensity compatible with automatic placement equipment eia and ice standard package suitable for infrared, vapor phase and wavesolder process 8mm tape and reel standard: gs08 or gs18 lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications high speed ir data transmission high power emitter for low space applications high performance transmissive or reflective sensors parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part ordering code remarks TSMF3710-GS08 TSMF3710-GS08 moq: 7500 pc tsmf3710-gs18 tsmf3710-gs18 moq: 8000 pc parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 si fm 200 ma surge forward current t p = 100 si fsm 1a power dissipation p v 170 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c
www.vishay.com 2 document number 81088 rev. 1.2, 08-mar-05 vishay tsmf3710 vishay semiconductors basic characteristics t amb = 25 c, unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) storage temperature range t stg - 40 to + 100 c soldering temperature t 10 sec t sd 260 c thermal resistance junction/ ambient r thja 450 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 100 ma, t p = 20 ms v f 1.5 1.8 v i f = 1 a, t p = 100 sv f 2.3 v temp. coefficient of v f i f = 100 ma tk vf -2.1 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 125 pf radiant intensity i f = 100 ma, t p = 20 ms i e 10 22 mw/sr i f = 1 a, t p = 100 si e 100 mw/sr radiant power i f = 100 ma, t p = 20 ms e 40 mw temp. coefficient of e i f = 100 ma tk e -0.35 %/k angle of half intensity ? 60 deg peak wavelength i f = 100 ma p 870 nm spectral bandwidth i f = 100 ma ? 40 nm temp. coefficient of p i f = 100 ma tk p 0.25 nm/k rise time i f = 100 ma t r 30 ns fall time i f = 100 ma t f 30 ns virtual source size ? 0.44 mm parameter test condition symbol value unit figure 1. power dissipatio n vs. ambient temperature 0 50 100 150 200 14846 p - power dissipation ( mw ) v r thja t amb - ambient temperature ( c) 0 2040 6080100 figure 2.forwardcurrentvs.ambienttemperature 0 25 50 75 100 125 14847 r thja i - forward current ( ma ) f t amb - ambient temperature ( c) 0 2040 6080100
vishay tsmf3710 document number 81088 rev. 1.2, 08-mar-05 vishay semiconductors www.vishay.com 3 figure 3. pulse forward current vs. pulse duration figure 4. forward current vs. forward voltage figure 5. radiant intensity vs. forward pulse current 0.01 0.1 1 10 1 10 100 1000 10000 t p - pulse length ( ms ) 100 95 9985 i - forward current ( ma ) f dc t p /t = 0.005 0.5 0.2 0.1 0.01 0.05 0.02 t amb <60 c 18873 f i - forward current ( ma ) 1000 100 10 1 v f - forward voltag e(v) 01234 t = 100 s p t / t = 0.001 p 0.1 1 10 100 1 10 100 1000 18874 i f - forward pulse current ( ma ) i - radiant intensity ( mw/sr ) e t = 100 s p figure 6.relativeradiantpowervs.wavelength figure 7.relativeradiantintensityvs.angulardisplaement 820 870 0 0.25 0.5 0.75 1.0 1.25 920 15821 i f = 100 ma - relative radiant power e rel - wavelength ( nm ) 0.4 0.2 0 0.2 0.4 i - relative radiant intensity e rel 0.6 94 8013 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0
www.vishay.com 4 document number 81088 rev. 1.2, 08-mar-05 vishay tsmf3710 vishay semiconductors package dimensions in mm 95 11314 mounting pad layout 3.5 0.2 0.85 1.65 + 0.10 - 0.05 pin identification 2.8 + 0.15 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist dimensions: ir and vaporphase (wave soldering) technical drawings according to din specifications drawing-no. : 6.541-5025.01-4 issue: 7; 05.04.04 ca
vishay tsmf3710 document number 81088 rev. 1.2, 08-mar-05 vishay semiconductors www.vishay.com 5 temperature - time profile drypack devices are packed in moistu re barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a des- iccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated in j-std-020. tsm... is released for: moisture sensitivity le vel 2, according to jedec, j-std-020 floor life: 1 year conditions: t amb < 30 c, rh < 60 % drying in case of moisture absorption devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h @ 40 c (+ 5 c), rh < 5 % figure 8. lead tin (snpb) reflow solder profile max. 160 c full line : typical dotted line : process limits time ( s ) temperature ( c ) lead temperature 90s-120s 300 250 200 150 100 50 0 0 50 100 150 200 250 max. 240 c ca. 230 c 10 s 215 c max40s 2 k/s - 4 k/s 94 8625 adhesive tape component cavity blister tape 94 8670 1.85 1.65 4.0 3.6 3.6 3.4 2.05 1.95 1.6 1.4 4.1 3.9 4.1 3.9 5.75 5.25 8.3 7.7 3.5 3.1 2.2 2.0 0.25 94 8668 anode cathode
www.vishay.com 6 document number 81088 rev. 1.2, 08-mar-05 vishay tsmf3710 vishay semiconductors missing devices a maximum of 0.5 % of the total number of compo- nents per reel may be missing, exclusively missing components at the beginning and at the end of the reel. a maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. the tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty comparte- ments. the tape leader may include the carrier tape as long as the cover tape is not connected to the car- rier tape. the least comoponent is followed by a car- rier tape trailer with a least 75 empty compartements and sealed with cover tape. cover tape removal force the removal force lies between 0.1 n and 1.0 n at a removal speed of 5 mm/s. in order to prevent compo- nents from popping out of the bliesters, the cover tape must be pulled off at an angle of 180 with regard to the feed direction. figure 11. beginning and end of reel figure 12. dimensions of reel de-reeling direction tape leader min. 75 empty compartments > 160 mm 40 empty compartments carrier leader carrier trailer 94 8158 180 178 identification 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 14.4 max. 10.0 9.0 120 94 8665 label: vishay type group tape code production code quantity
vishay tsmf3710 document number 81088 rev. 1.2, 08-mar-05 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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